技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 4 N-Channel (Full Bridge)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 319W (Tc)
• Drain to Source Voltage (Vdss) 1700V (1.7kV)
• Current - Continuous Drain (Id) @ 25°C 64A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 1000V
• Rds On (Max) @ Id, Vgs 45mOhm @ 30A, 20V
• Gate Charge (Qg) (Max) @ Vgs 178nC @ 20V
• Vgs(th) (Max) @ Id 3.2V @ 2.5mA
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant