技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 3.1W (Ta), 41W (Tc)
• Drain to Source Voltage (Vdss) 80V
• Current - Continuous Drain (Id) @ 25°C 28.5A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 631pF @ 40V
• Rds On (Max) @ Id, Vgs 26mOhm @ 10A, 10V
• Gate Charge (Qg) (Max) @ Vgs 10.4nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package PowerDI5060-8 (Type UXD)
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant