技术参数

• Package / Case Y4-M6
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 370W
• Drain to Source Voltage (Vdss) 200V
• Current - Continuous Drain (Id) @ 25°C 84A
• Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V
• Rds On (Max) @ Id, Vgs 25mOhm @ 500mA, 10V
• Gate Charge (Qg) (Max) @ Vgs 450nC @ 10V
• Vgs(th) (Max) @ Id 4V @ 8mA
• Supplier Device Package Y4-M6
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant