技术参数

• Package / Case Y3-Li
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 1000A
• Rds On (Max) @ Id, Vgs 1.2mOhm @ 800A, 10V
• Gate Charge (Qg) (Max) @ Vgs 2355nC @ 10V
• Vgs(th) (Max) @ Id 4V @ 10mA
• Supplier Device Package Y3-Li
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected