技术参数

• Package / Case i4-Pac™-5
• Mounting Type Through Hole
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 150V
• Current - Continuous Drain (Id) @ 25°C 65A
• Rds On (Max) @ Id, Vgs 22mOhm @ 50A, 10V
• Gate Charge (Qg) (Max) @ Vgs 230nC @ 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Supplier Device Package ISOPLUS i4-PAC™
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant