- 产品型号 5N20A
- 品牌 Goford Semiconductor
- RoHS Yes
- 描述 N200V,RD(MAX)<650M@10V,VTH1V~3V,
- 分类 单 FET、MOSFET
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- 库存 3407
技术参数
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 5A (Tc)
- Rds On (Max) @ Id, Vgs 580mOhm @ 2.5A, 10V
- Power Dissipation (Max) 78W (Tc)
- Vgs(th) (Max) @ Id 3V @ 250µA
- Supplier Device Package TO-252 (DPAK)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 255 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


