技术参数

• Package / Case 8-TSSOP (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V, 1200pF @ 10V
• Rds On (Max) @ Id, Vgs 22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V, 51nC @ 10V
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Supplier Device Package 8-TSSOP
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)