技术参数

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type NPN - Pre-Biased
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 5V
• Current - Collector (Ic) (Max) 2 A
• Voltage - Collector Emitter Breakdown (Max) 60 V
• Power - Max 1 W
• Resistor - Base (R1) 2.2 kOhms
• Resistor - Emitter Base (R2) 10 kOhms
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant