技术参数

• Package / Case 8-PowerSOIC (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 7A (Tc)
• Rds On (Max) @ Id, Vgs 440mOhm @ 3.5A, 10V
• Power Dissipation (Max) 1W (Ta), 22W (Tc)
• Vgs(th) (Max) @ Id 4.5V @ 1mA
• Supplier Device Package 8-HSOP
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 200 V
• Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 420 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0075
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant