技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 908A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 45300pF @ 0V
• Supplier Device Package Module
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) Not Applicable