技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 223mW (Ta)
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 160mA (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 15pF @ 15V
• Rds On (Max) @ Id, Vgs 4.2Ohm @ 160mA, 10V
• Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Supplier Device Package SOT-563
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant