技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 300mW (Ta)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 67pF @ 10V, 38pF @ 10V
• Rds On (Max) @ Id, Vgs 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
• Vgs(th) (Max) @ Id 900mV @ 250µA, 1V @ 250µA
• Supplier Device Package SOT-563
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant