- 产品型号 RF4G100BGTCR
- 品牌 ROHM Semiconductor
- RoHS Yes
- 描述 NCH 40V 10A, HUML2020L8, POWER M
- 分类 单 FET、MOSFET
- 库存 2790
技术参数
- Package / Case 8-PowerUDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Rds On (Max) @ Id, Vgs 14.2mOhm @ 10A, 10V
- Power Dissipation (Max) 2W (Ta)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package DFN2020-8S
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 20 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


