技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 7.9A (Tc)
• Rds On (Max) @ Id, Vgs 50mOhm @ 2.8A, 4.5V
• Power Dissipation (Max) 5W (Tc)
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Supplier Device Package 8-SO
• Drive Voltage (Max Rds On, Min Rds On) 4.5V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 20 V
• Moisture Sensitivity Level (MSL) 2 (1 Year)
• REACH Status REACH Unaffected