技术参数

• Package / Case TO-226-3, TO-92-3 Long Body
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 400mV @ 3mA, 30mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA, 5V
• Frequency - Transition 150MHz
• Supplier Device Package 3-MP
• Current - Collector (Ic) (Max) 70 mA
• Voltage - Collector Emitter Breakdown (Max) 160 V
• Power - Max 900 mW
• Moisture Sensitivity Level (MSL) Vendor Undefined
• REACH Status REACH Unaffected