技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 350mV @ 200mA, 2A
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
• Frequency - Transition 210MHz
• Supplier Device Package SOT-666
• Current - Collector (Ic) (Max) 2 A
• Voltage - Collector Emitter Breakdown (Max) 20 V
• Power - Max 900 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected