- 产品型号 PEMD19,115
- 品牌 NXP Semiconductors
- RoHS No
- 描述 NEXPERIA PEMD19 - SMALL SIGNAL B
- 分类 双极晶体管阵列,预偏置
- 库存 13500
技术参数
- Package / Case SOT-563, SOT-666
- Mounting Type Surface Mount
- Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
- Power - Max 300mW
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) 1µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
- Resistor - Base (R1) 22kOhms
- Supplier Device Package SOT-666
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected


