技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.6W (Ta), 3.1W (Tc)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 2.9A (Ta), 4.1A (Tc), 2.4A (Ta), 3.3A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 222pF @ 50V, 525pF @ 50V
• Rds On (Max) @ Id, Vgs 83mOhm @ 1.5A, 10V, 131mOhm @ 1.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 5nC @ 10V, 8.4nC @ 10V
• Supplier Device Package 8-SOIC
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant