技术参数

• Package / Case TO-226-3, TO-92-3 Long Body, Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Power - Max 200W
• Current - Collector (Ic) (Max) 50mA
• Voltage - Collector Emitter Breakdown (Max) 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 3mA, 1V
• Frequency - Transition 2GHz
• Supplier Device Package TO-92 (TO-226)
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected