技术参数

• Package / Case TO-247-4
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 100A (Tc)
• Rds On (Max) @ Id, Vgs 32mOhm @ 50A, 20V
• Power Dissipation (Max) 500W (Tc)
• Vgs(th) (Max) @ Id 4V @ 30mA
• Supplier Device Package TO-247-4L
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Vgs (Max) +22V, -6V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 265 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 495 pF @ 800 V
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant