技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• FET Type N-Channel
• Input Capacitance (Ciss) (Max) @ Vds 3pF @ 10V
• Voltage - Breakdown (V(BR)GSS) 40 V
• Current Drain (Id) - Max 50 mA
• Supplier Device Package TO-92
• Drain to Source Voltage (Vdss) 40 V
• Power - Max 300 mW
• Voltage - Cutoff (VGS off) @ Id 1 V @ 1 nA
• Current - Drain (Idss) @ Vds (Vgs=0) 80 µA @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant