技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 5A (Ta)
• Rds On (Max) @ Id, Vgs 80mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id 3.5V @ 250µA
• Supplier Device Package 8-SOP
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 20 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant