技术参数

• Package / Case TO-220-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 80A (Tc)
• Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V
• Power Dissipation (Max) 137W (Tc)
• Vgs(th) (Max) @ Id 2V @ 253µA
• Supplier Device Package PG-TO220-3-1
• Grade Automotive
• Vgs (Max) +5V, -16V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 11300 pF @ 25 V
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant