技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 40A (Tc)
• Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
• Power Dissipation (Max) 417W (Tc)
• Vgs(th) (Max) @ Id 5V @ 1mA
• Supplier Device Package PowerFlat™ (8x8) HV
• Vgs (Max) +22V, -10V
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant