技术参数

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
• Power - Max 350mW
• Current - Collector (Ic) (Max) 100mA
• Voltage - Collector Emitter Breakdown (Max) 50V
• Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 5V
• Frequency - Transition 230MHz, 180MHz
• Resistor - Base (R1) 47kOhms
• Resistor - Emitter Base (R2) 47kOhms
• Supplier Device Package DFN1010B-6
• ECCN EAR99
• HTSUS 8541.21.0075