技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Transistor Type 2 NPN - Pre-Biased (Dual)
• Power - Max 300mW
• Current - Collector (Ic) (Max) 100mA
• Voltage - Collector Emitter Breakdown (Max) 50V
• Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max) 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V
• Resistor - Base (R1) 47kOhms
• Resistor - Emitter Base (R2) 22kOhms
• Supplier Device Package SOT-666
• ECCN EAR99
• HTSUS 8541.21.0095