技术参数

• Package / Case 6-UFDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type 1 NPN, 1 PNP
• Operating Temperature 150°C (TJ)
• Power - Max 510mW
• Current - Collector (Ic) (Max) 2A
• Voltage - Collector Emitter Breakdown (Max) 30V
• Vce Saturation (Max) @ Ib, Ic 290mV @ 200mA, 2A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 2V
• Frequency - Transition 120MHz
• Supplier Device Package 6-HUSON (2x2)
• ECCN EAR99
• HTSUS 8541.29.0075