技术参数

• Package / Case SC-101, SOT-883
• Mounting Type Surface Mount
• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max) 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V
• Supplier Device Package DFN1006-3
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 250 mW
• Resistor - Base (R1) 47 kOhms
• Resistor - Emitter Base (R2) 22 kOhms
• ECCN EAR99
• HTSUS 8541.21.0095