技术参数

• Package / Case 6-UFBGA, WLCSP
• Mounting Type Surface Mount
• Configuration 2 P-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 900mW
• Rds On (Max) @ Id, Vgs 126mOhm @ 1A, 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package 6-WLCSP (1x1.5)
• ECCN EAR99
• HTSUS 8542.39.0001