技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 650mV @ 100mA, 2A
• Current - Collector Cutoff (Max) 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V
• Frequency - Transition 390MHz
• Supplier Device Package 3-CPH
• Current - Collector (Ic) (Max) 3 A
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 900 mW
• ECCN EAR99
• HTSUS 8541.21.0075