技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.2W, 2.5W
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 15A, 26A
• Input Capacitance (Ciss) (Max) @ Vds 1770pF @ 13V
• Rds On (Max) @ Id, Vgs 5.6mOhm @ 15A, 10V
• Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package 8-PQFN (5x6)
• ECCN EAR99
• HTSUS 8542.39.0001