技术参数

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 400mV @ 300mA, 3A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 175 @ 1A, 1V
• Frequency - Transition 160MHz
• Supplier Device Package SOT-223 (TO-261)
• Current - Collector (Ic) (Max) 3 A
• Voltage - Collector Emitter Breakdown (Max) 40 V
• Power - Max 2 W
• ECCN EAR99
• HTSUS 8541.21.0075