技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.27W
• Drain to Source Voltage (Vdss) 62V
• Current - Continuous Drain (Id) @ 25°C 3.3A
• Input Capacitance (Ciss) (Max) @ Vds 300pF @ 15V
• Rds On (Max) @ Id, Vgs 110mOhm @ 3.3A, 10V
• Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package 8-SOIC
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8542.39.0001