技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 750mV @ 50mA, 500mA
• Current - Collector Cutoff (Max) 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 1V
• Frequency - Transition 250MHz
• Supplier Device Package TO-236AB
• Current - Collector (Ic) (Max) 600 mA
• Voltage - Collector Emitter Breakdown (Max) 40 V
• Power - Max 250 mW
• ECCN EAR99
• HTSUS 8541.21.0075