技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA
• Current - Collector Cutoff (Max) 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
• Supplier Device Package SOT-23
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 250 mW
• Resistor - Base (R1) 4.7 kOhms
• Resistor - Emitter Base (R2) 4.7 kOhms
• HTSUS 0000.00.0000