技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 80mA, 800mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V
• Frequency - Transition 100MHz
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 1.5 A
• Voltage - Collector Emitter Breakdown (Max) 25 V
• Power - Max 1 W
• ECCN EAR99
• HTSUS 8541.29.0075