技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Operating Temperature 125°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
• Rds On (Max) @ Id, Vgs 20Ohm @ 10mA, 10V
• Power Dissipation (Max) 200mW (Ta)
• Supplier Device Package 3-CP
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 50 V
• Input Capacitance (Ciss) (Max) @ Vds 15 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095