技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2W
• Drain to Source Voltage (Vdss) 60V, 300V
• Current - Continuous Drain (Id) @ 25°C 1.3A, 300mA
• Rds On (Max) @ Id, Vgs 550mOhm @ 650mA, 10V
• Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 5V
• Vgs(th) (Max) @ Id 1.95V @ 20mA
• Supplier Device Package 8-SOIC
• ECCN EAR99
• HTSUS 8542.39.0001