技术参数

• Package / Case TO-220-3
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 50A (Tc)
• Rds On (Max) @ Id, Vgs 31mOhm @ 25A, 10V
• Power Dissipation (Max) 1.5W (Ta), 84W (Tc)
• Supplier Device Package TO-220AB
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095