- 产品型号 BCR08PNE6327BTSA1
- 品牌 IR (Infineon Technologies)
- RoHS No
- 描述 TRANS NPN/PNP PREBIAS SOT363
- 分类 双极晶体管阵列,预偏置
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PDF
- 库存 1500
技术参数
- Package / Case 6-VSSOP, SC-88, SOT-363
- Mounting Type Surface Mount
- Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
- Power - Max 250mW
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 5V
- Frequency - Transition 170MHz
- Resistor - Base (R1) 2.2kOhms
- Resistor - Emitter Base (R2) 47kOhms
- Supplier Device Package PG-SOT363-PO
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected


