技术参数

• Package / Case SC-101, SOT-883
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
• Rds On (Max) @ Id, Vgs 4.1Ohm @ 200mA, 4.5V
• Power Dissipation (Max) 360mW (Ta), 2.7W (Tc)
• Vgs(th) (Max) @ Id 1.1V @ 250µA
• Supplier Device Package DFN1006B-3
• Vgs (Max) ±8V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 0.72 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant