技术参数

• Package / Case 4-SMD (200 mil BeO)
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Power - Max 3W
• Current - Collector (Ic) (Max) 200mA
• Voltage - Collector Emitter Breakdown (Max) 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 110mA, 8V
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected