技术参数

• Package / Case 18-WFBGA
• Mounting Type Surface Mount
• Configuration 2 P-Channel (Dual) Common Drain
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2.1W (Ta)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 884pF @ 10V
• Rds On (Max) @ Id, Vgs 45mOhm @ 5.5A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Supplier Device Package 18-BGA (2.5x4)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant