技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 450A
• Input Capacitance (Ciss) (Max) @ Vds 30.7nF @ 800V
• Rds On (Max) @ Id, Vgs 4.2mOhm @ 425A, 15V
• Gate Charge (Qg) (Max) @ Vgs 1135nC @ 15V
• Vgs(th) (Max) @ Id 3.6V @ 115mA
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)