技术参数

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 10A (Tc)
• Rds On (Max) @ Id, Vgs 670mOhm @ 5A, 10V
• Power Dissipation (Max) 125W (Tc)
• Vgs(th) (Max) @ Id 4V @ 1mA
• Supplier Device Package TO-3P
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 500 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant