技术参数

• Package / Case 16-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Power - Max 1.5W
• Current - Collector (Ic) (Max) 4A
• Voltage - Collector Emitter Breakdown (Max) 75V
• DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 100mA, 10V
• Supplier Device Package 16-DIP
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant