技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max) 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V
• Frequency - Transition 150MHz
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Power - Max 500 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status RoHS non-compliant