技术参数

• Package / Case 3-SIP
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 125°C (TJ)
• Power - Max 300mW
• Current - Collector (Ic) (Max) 50mA
• Voltage - Collector Emitter Breakdown (Max) 19V
• DC Current Gain (hFE) (Min) @ Ic, Vce 39 @ 5mA, 10V
• Frequency - Transition 1.1GHz
• Supplier Device Package 3-SIP
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status RoHS non-compliant