技术参数

• Package / Case 3-SIP
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 10A
• Current - Collector Cutoff (Max) 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 8A, 4V
• Frequency - Transition 20MHz
• Supplier Device Package 3-SIP
• Current - Collector (Ic) (Max) 17 A
• Voltage - Collector Emitter Breakdown (Max) 200 V
• Power - Max 200 W
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status Vendor Undefined
• RoHS Status ROHS3 Compliant