技术参数

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 5V @ 800mA, 4A
• Current - Collector Cutoff (Max) 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 1A, 5V
• Frequency - Transition 3MHz
• Supplier Device Package TO-3P
• Current - Collector (Ic) (Max) 5 A
• Voltage - Collector Emitter Breakdown (Max) 800 V
• Power - Max 120 W
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status Vendor Undefined
• RoHS Status ROHS3 Compliant